Description:

Detector, Phototransistor; TO-18; NPN; 12 deg; 30 V; 0.4 V; 4 mA (Max.); 100 nA

Description:

Silicon photodiode; lateral; fast response; dark current; wide field of vision

Description:

PHOTODARLINGTON SILICON NPN T-1

Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

Phototransistor, 2 Elements, 18deg, BPX82

Description:

EMITTER IR 935NM 50MA RADIAL

Description:

Photocell; 6.7 Megohms (Min.); 615 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-5

Description:

PHOTO TRANSISTOR FLAT LENS

Description:

Detector, Thermopile TO-41, 42 V .5 MM -20c to +100c

Description:

Diode, Infrared Emitter, T-1 Pkg, 15 Beam Angle, 20 mA Forward Current

Description:

Detector, Phototransistor; Pill Style Metal Can; NPN; 48 deg; 30 V; 0.4 V; 100

Description:

Phototrans. array, 9 elem, +/-18deg, BPX 89

Description:

Sensor, Phototransistor Detector, Silicon, 3.0-8.0 Light Current (mA)

Description:

Opto SFH 305 32 deg IR + Visible Light Phototransistor, Through Hole 2-Pin

Description:

SENSOR PHOTOLOGIC SIDE LOOKING

Description:

5MM SLOT L/D-ON PNP NARROW MT

Description:

Fan Relay, Type 84, 115/120VAC coil, SPDT

Description:

PHOTO TRANSISTOR PLASTIC T-1 3/4

Description:

DUP PIR DETECTOR CEILING OPUS

Description:

SMT refl Sensor LED Emit+Phototrans, 9202

Description:

BPX 43-5 30 IR+Visible Light Phototransistor, Through Hole 3-Pin TO-18 package

Description:

NPN Silicon phototransistor; TO-106; ceramic; fast response; Wide field of view

Description:

SENS OPTO SLOT 3.18MM TRANS THRU

Description:

PHOTODIODE VERSIONOPB610

Description:

PHOTOCELL

Description:

Photodiode; 0.16 mA (Typ.); 0.45 V (Typ.); 0.02 uA (Typ.); 0.5 nF (Typ.); 0.2

Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

Photodiode, Silicon Pin; 60 muA (Typ.); 390 mV (Typ.); 2 nA (Typ.); -55 degC

Description:

PHOTO TRANSISTOR PLASTIC T-1

Description:

Photoconductive Cell, Plastic Encapsulated, Ceramic Package, TO-18

Description:

PHOTO TRANSISTOR PLASTIC T-1 3/4

Description:

Panel Mount Hermetic Sensor

Description:

Photoconductive Cell; 24 Kilohms (Typ.); 500 Kilohms; 0.80 (Typ.); -40 degC

Description:

Photoconductive Cell, Plastic Encapsulated Ceramic Pkg, TO-18

Description:

SILICON PHOTODIODES

Description:

PHOTOTRANS. W/BASE-EMITTER RES. PLAS TO-46

Description:

SMART-DUPLINE 55X55 PIR DETECTOR 90° REV.2

Description:

PHOTOLOGIC LATERAL,

Description:

Photoconductive Cell; 1 Megohms (Min.); 0.90 (Typ.); 100 Vpeak (Max.); 40 V

Description:

Description:

Opto BPX48 IR + Visible Light Si Photodiode, 60 deg, Through-hole DIP

Description:

Optocoupler, High Speed; DIP-8; -55 degC; 100 degC; -1.7 mV/ degC (Typ.); 5.0

Description:

PHOTOTRANS. W/BASE-EMITTER RES. PLAS TO-46

Description:

SENS OPTO SLOT 3.18MM TRANS C-MT

Description:

SMART-DUPLINE INDOOR PIR SENSOR REV.2

Description:

SMART-DUPLINE LUX SENSOR REV.3

Description:

TCPT1350X01 Surface Mount Slotted Optical Switch, Transistor Output

Description:

Opto SFH 3710-3/4 120 deg Full SpectrumPhototransistor, Surface Mount 2-Pin

Description:

PHOTOTRANS. W/BASE-EMITTER RES. PLAS TO-46