Description:

panele mount, open ceramic, 5 meg ohms, max 100v

Description:

Silicon photodiode; ceramic; plastic molded lens; fast response; low dark current

Description:

Photoconductive Cell, Hermetically Sealed, TO-8

Description:

Phototransistor; Compact Metal Can Coaxial Package; NPN; 0.4 V (Sat.); 100 nA

Description:

HERMETIC PHOTOCELL

Description:

Opto SFH 3410 -1/2 120 deg Full Spectrum Phototransistor, Smnt 3-Pin DIP package

Description:

Infrared Emitting Diode; GaAs; 2 Amp; T-1-3/4 package; RoHS

Description:

Planar silicon photodiode; two lead ceramic; coated with thick layer clear epoxy

Description:

BPX 81-2/3 36 IR+Visible Light Phototransistor, Through Hole 2-Pin DIP package

Description:

Opto SFH 3711 +/-60 deg IR Phototransistor, Surface Mount 2-Pin

Description:

Photodiode, 5mm, with NTC Temp Sensor

Description:

DIODE, IR EMITTING, 33 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C

Description:

DIODE, IR EMITTING, 30 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C

Description:

PHOTODARLINGTON SILICON NPN T-1

Description:

Silicon photodiode; three lead TO-8 hermetic; flat window; UV enhanced; wide FOV

Description:

PHOTODIODE VERSIONOPB610

Description:

ULTRAVIOLET METAL CAN LED - 380NM

Description:

Infrared Emitter, GaAs Diode, 935 nm, 5.0 mW/cm2, TO-46

Description:

LAT. TM PHOTOTRANS. W/ 2M RBE SENSOR CHIP MOLDED BLACK

Description:

PILLGAALAS IFRARED EMITTING DIODE

Description:

ULTRAVIOLET METAL CAN LED - 425NM

Description:

SMART-DUPLINE INDOOR PIR SENSOR REV.2

Description:

EMITTER IR 890NM 50MA RADIAL

Description:

NTE Electronics, Inc.

Description:

Photo Diode, Planar; Clear Epoxy Dome Package; 55 muA (Typ.); 0.40 V (Typ.)

Description:

PHOTOLOGIC SLOTTED OPTICAL SWITCH

Description:

Photoconductive Cell; 1 Megohms (Min.); 0.90 (Typ.); 100 Vpeak (Max.); -40 degC

Description:

LATERAL LED WITH POINT SOURCE 850 NM CHIP

Description:

PHOTOTRNS NPN PLASTIC SIDE LOOK

Description:

Sensor; Infrared; Emitting Diode; Side-Looking Plastic Pkg; 20mA Forward Current

Description:

Opto SFH 3410 -3/4 120 deg Full Spectrum Phototransistor, Smnt 3-Pin DIP package

Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

Lighting Controller Detector; PIR/Daylight; Ceiling Mount; 220 - 240 Vac; 28mm Dia.

Description:

PHOTOTRANS SILICN NPN SIDE LOOK

Description:

Diode, Infrared Emitter; TO-46 Metal Can; 880 nm; 1.9 V; 100 mA (Cont.); -55 de

Description:

Diode, Infrared Emitter, T-1 Pkg, 15 Degree, 20 mA Forward Current

Description:

TCRT1000, Through Hole Reflective Optical Sensor, Phototransistor Output

Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

Photodiode, Silicon Pin; 60 muA (Typ.); 390 mV (Typ.); 2 nA (Typ.); -55 degC

Description:

AMBIENT LIGHT SENSOR PHOTOTRANSISTOR CHIP SILICON 570NM 2-PIN T-1 3/4

Description:

Photoconductive Cell; 32 Kilohms (Typ.); 1 Megohms (Min.); 0.80 (Typ.); 500 mW

Description:

Opto SFH 309 24 Full Spectrum Phototransistor, Through Hole 2-Pin 3mm(T-1)package

Description:

TO-18NPN SILICON PHOTO TRANSISTOR

Description:

Photoconductive Cell, Hermetically Sealed, TO-18

Description:

PHOTO TRANSISTOR PLASTIC T-1

Description:

THRU-BEAM DETECTOR CABLE VERSION, DC 100 FT

Description:

PHOTOLOGIC LATERAL,

Description:

PILLNPN SILICON PHOTO TRANSISTOR

Description:

PHOTOLOGIC LATERAL,

Description:

Detector, Thermopile TO-5 0.7 mm x 0.7 mm 35 V/W 2.5 mm