Description:

panel mount hermetic, nm 560, a/w .37, nA 10, v 50

Description:

Detector, Phototransistor, Side-LookingPlastic Package, 50 Degree, 0.4V, 100

Description:

Silicon photodiode; hermetic TO-46; fast response; dark current; wide field of view

Description:

880 nm IRED lateral; 4.57x1.65 mm; 2.5 mWoutput power; emission profile of ±25°

Description:

Phototransistor; TO-46; NPN; 30 V; 0.4 V; 16 mA (Min.); 100 nA; 150 mW; -55 deg

Description:

6990034

Description:

DIODE, IR EMITTING, 56 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C

Description:

PHOTOTRANS. W/BASE-EMITTER RES. PLAS TO-46

Description:

Photodiode, Solderable Planar; 0.3 mA (Min.); 0.40 V (Typ.); 1.7 uA (Max.)

Description:

PHOTODIODE FIBER OPTIC PIN TO-46

Description:

ULTRAVIOLET METAL CAN LED - 405NM

Description:

Photocell; 0.80 Megohms (Min.); 515 nm; 80 Vpeak (Max.); 50 mW @ 25 degC; TO-18

Description:

NTE Electronics, Inc.

Description:

OPB100-EZ OPB100 IR LED, Snap-In package

Description:

CDS/CDSE PHOTOCONDUCTIVE CELLS, HERMETICALLY SEALED PKG, TO-5

Description:

NTE Electronics, Inc.

Description:

PHOTOTRANS SILICON NPN HERM TO18

Description:

DUP PIR DETECTOR WALL FUGA

Description:

Opto SFH 3015 FA 13 deg Visible Light Phototransistor, Smnt Side Looker package

Description:

Pyroelectric Infrared Detectors - Dual Element Detectors

Description:

IR TO18 PIN Photodiode 80°, BPX65

Description:

Detector, Phototransistor; Side-LookingPlastic; NPN; 50 deg; 30 V; 0.4 V; 100

Description:

Phototransistor, Silicon, TO-18 Metal Can

Description:

PHOTODIODE PIN 935NM SIDELOOK

Description:

VTB Process Photodiode; 40v ; 355 ua ; TO-8 pckg

Description:

PHOTODARL SILICON NPN SIDE LOOK

Description:

INFRARED LED; PLCC-2 PKG, CLEAR, SILICONE, POINT SOURCE, 875NM LED

Description:

PIN Photodiode, 5mm, Half Angle 10deg

Description:

EMITTER IR 890NM 100MA RADIAL

Description:

PILLNPN SILICON PHOTO TRANSISTOR

Description:

PHOTOTRANS SILICON PIN SIDE LOOK

Description:

OP280 OP280 IR Emitting Diode, 890nm, PLCC 2 SMD package

Description:

Infrared Emitter, GaAs Diode, 890 nm, 5mW/cm2, TO-46

Description:

EMITTER IR 890NM 50MA RADIAL

Description:

Photodiode; 30 Series; 0.69 mA (Typ.); 0.45 V (Typ.); 0.05 muA (Typ.); -40 deg

Description:

Sensor, Photodiode Dectetor, Silicon, Bulk Pack

Description:

880 nm IRED lateral; 4.57x1.65 mm.; 5 mW output power; emission profile of ±25°

Description:

PHOTO TRANSISTOR PLASTIC TO-18

Description:

Opto SFH 3410 -2/3 120 deg Full Spectrum Phototransistor, Smnt 3-Pin DIP package

Description:

Photodiode; 400 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 180 pF (Typ.); -20 deg

Description:

PHOTOTRANS SILICON NPN HERM TO18

Description:

HI POWER OUTMED SPEEDTO-46 FLAT LENS

Description:

Opto SFH 3711 +/-60 deg IR Phototransistor, Surface Mount 2-Pin

Description:

PHOTO DARLINGTON NPN 15V 850NM

Description:

SENSOR PHOTOLOGIC HERMETIC TO-18

Description:

AMBIENT LIGHT SENSOR PHOTOTRANSISTOR CHIP SILICON 570NM 2-PIN T-1 3/4

Description:

Detector; TO-46; NPN; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.

Description:

HP Cooled PbS 3x3 Detector

Description:

NPN Silicon phototransistor; TO-106; ceramic; fast response; Wide field of view

Description:

Photoconductive Cell, Plastic Encapsulated Ceramic Pkg, TO-5