Description:

Diode, Infrared Emitter; TO-46 Metal Can; 880 nm; 1.9 V; 100 mA (Cont.); -55 de

Description:

Diode, Infrared Emitter; TO-46; 935 nm; 1.7 V; 100 mA; -55 degC; 125 degC; 150

Description:

Diode, Infrared Emitter; TO-46 Metal Can; 880 nm; 1.9 V; 100 mA; -55 degC; 125

Description:

Diode, Infrared Emitter; T-1; 935 nm; 1.5 V; 20 mA; -55 degC; 125 degC; 70 mW;

Description:

Diode, Infrared Emitter; Side Emitting Plastic; 935 nm; 1.5 V; 50 mA; -40 degC

Description:

Diode, Infrared Emitter, Side-Emitting, Plast Pkg, 50 Degree, 20mA Forward Cur.

Description:

Diode, Infrared Emitter; T-1; 880 nm; 1.7 V; 50 mA; -40 degC; 85 degC; 70 mW;

Description:

Diode, Infrared Emitter, T-1 Pkg, 15 Degree, 20 mA Forward Current

Description:

Diode, Infrared Emitter; Side-Emitting Plastic IR Component; 880 nm; 1.7 V; 0.7

Description:

Diode, Infrared Emitter, T-1 Pkg, 15 Beam Angle, 20 mA Forward Current

Description:

Diode, Infrared Emitter; Side Looking; 880 nm; 1.7 V; 20 mA; -40 degC; 85 degC

Description:

Emitter, Infrared Diode, Side-Looking Plastic Pkg, 10 Degree, 20mA Forward Cur.

Description:

Sensor; Infrared; Emitting Diode; Side-Looking Plastic Pkg; 20mA Forward Current

Description:

Sensor, Photodiode Dectetor, Silicon, Bulk Pack

Description:

Sensor, Photodiode Detector, Silicon, Tape & Reel, Upright

Description:

Sensor, Phototransistor Detector, Silicon, Surface Mount Pkg, Glass Lens

Description:

Sensor, Phototransistor Detector, 28 Angular Response, Surface Mount Package

Description:

Sensor, Phototransistor Detector, Silicon, Tape & Reel, Inverted

Description:

Sensor, Phototransistor Detector, Silicon, 3.0-8.0 Light Current (mA)

Description:

Sensor; Photo Transistors; Surface Mount Pkg; Glass Lens; 100 nA Dark Current

Description:

Sensor, Phototransistor Detector, Silicon, Tape & Reel, Upright

Description:

Sensor, Infrared Emmitting Diode, Surface Mount Pkg, Glass Lens, AIGaAs

Description:

Sensor, Infrared Emitting Diode, AIGaAs, Tape & Reel, Inverted