Description:

BPW34 IR + Visible Light Si Photodiode, 65 deg, Through-hole

Description:

H11A1 DC Input Phototransistor Output Optocoupler, Through Hole, 6-Pin DIP

Description:

SFH 9500 Surface Mount Slotted Optical Switch, Phototransistor Output

Description:

PHOTODIODE FIBER OPTIC PIN TO-46

Description:

Sensor, Hall Effect, 5 to 12V, Board Mount, 25 mA

Description:

PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD

Description:

PHOTOTRANSISTOR LATERAL DARK PACKAGE

Description:

Photoconductive Cell; 16 Kilohms (Typ.); 500 Kilohms (Min.); 0.75 (Typ.)

Description:

SFH 309-4 24 Full Spectrum Phototransistor, Through Hole 2-Pin 3mm(T-1)package

Description:

EMITTER IR 890NM 50MA RADIAL

Description:

Photo Diode; Peak Reflow Compatible (260 C)

Description:

ULTRAVIOLET METAL CAN LED - 385NM

Description:

PHOTO TRANSISTOR PLASTIC TO-18

Description:

PHOTOCELL, CDS, .2X.169IN.

Description:

SFH 309-3/4 24 Full Spectrum Phototransistor, Through Hole 2-Pin 3mm(T-1)package

Description:

AMBIENT LIGHT SENSOR PHOTOTRANSISTOR CHIP 570NM 2-PIN T-1

Description:

Photodiode, Hermetic Packaging

Description:

SLOTTED OPTICAL SWITCH PHOTOLOGIC

Description:

OP240C IR LED, 890nm, Side Looker Through Hole package

Description:

Optocoupler, High Speed; DIP-8; -55 degC; 100 degC; -1.8 mV/ degC (Typ.); 5.0

Description:

Opto SFH 313 FA 20 deg IR Phototransistor, Thru Hole 2-Pin 5mm(T-1 3/4)package

Description:

PLASTIC ENCAPSULATED CERAMIC PKG, TO-18

Description:

Dual-Element Pyroelectric Detector, TO5housing -for intrusion alarm

Description:

SENS OPTO SLOT 3.18MM TRANS THRU

Description:

PINNED PHOTO CELL

Description:

EMITTER IR 890NM 50MA RADIAL

Description:

Photoconductive Cell; 150 Ohms (Typ.) @100 ftc; 1000 Kilohms (Min.); 690 nm

Description:

Photodiode, 5mm, with NTC Temp Sensor

Description:

WAVELENGTH SELECTIVE PHOTODIODES, HERMETIC, CERAMIC, SMD PACKAGES

Description:

Optoelectronic, Photodiode; Avalanche; 275-450 V; TO-5

Description:

SMART-DUPLINE OUTDOOR PIR SENSOR+LUX REV.2

Description:

PIN DIODE TO-18,

Description:

Photocell; 20 M (Min.); 515 nm; 320 Vpeak (Max.); 125 mW @ 25 degC; TO-5; -60

Description:

Photocell; 0.80 Megohms (Min.); 515 nm; 80 Vpeak (Max.); 50 mW @ 25 degC; TO-18

Description:

B/U ASSY, 1173A-300 W/9 ft Cable

Description:

SENSOR PHOTOLOGIC HERMETIC TO-18

Description:

Photoconductive Cell; 8 Kilohms (Typ.); 200 Kilohms (Min.); 0.75 (Typ.); TO-8

Description:

Small area planar silicon photodiode ina lensed; dual lead TO-46 package

Description:

TO-18NPN SILICON PHOTO TRANSISTOR

Description:

NTE Electronics, Inc.

Description:

PhotoDiode; Side-Looking Plastic; PN; 50 deg; 4 muA (Min.); 50 nA; 100 mW; -40

Description:

PHOTO TRANSISTOR PLASTIC TO-18

Description:

WAVELENGTH SELECTIVE PHOTODIODES, HERMETIC, CERAMIC, T0-5 CERAMIC

Description:

PHOTODIODE SILICON PIN TO-18

Description:

Dual-Element Pyroelectric Detector, TO5housing - for motion sensing

Description:

Photocell; 6.7 Megohms (Min.); 615 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-5

Description:

Optoelectronics, Optocoupler; R(on) 0.90ohms, R(off) 500Kohms; V(f), 2.0V; I(f), 40mA;

Description:

Infrared Emitter, GaAs Diode, 890 nm, 3.0 mW/cm2, TO-46

Description:

Phototrans. array, 9 elem, +/-18deg, BPX 89

Description:

Opto BPW 34 B Full Spectrum Si Photodiode, 60 deg, Through-hole DIP