Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD

Description:

Photocell; 0.40 Megohms (Min.); 515 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-

Description:

SFH 309-5/6 24 Full Spectrum Phototransistor, Through Hole 2-Pin 3mm(T-1)package

Description:

Infrared Emitter, GaAs Diode, 890 nm, 3.5 nW/cm2, Miniature "Pill" Pak

Description:

PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD

Description:

Photocell; 0.80 Megohms (Min.); 515 nm; 80 Vpeak (Max.); 50 mW @ 25 degC; TO-18

Description:

PHOTOTRANS SILICON NPN HERM TO18

Description:

slotted optical switch HOA0961-T51

Description:

SLOTTED OPTICAL SWITCH PHOTOLOGIC

Description:

BPX 81-2/3 36 IR+Visible Light Phototransistor, Through Hole 2-Pin DIP package

Description:

Infrared Emitter, GaAs Diode, 890 nm, 1.0 mW/cm2, T1 (3 mm)

Description:

Silicon photodiode; 6mm ceramic; blue; very low dark current; wide field of view

Description:

Opto BPX 81 36 IR+Visible Light Phototransistor, Through Hole 2-Pin DIP package

Description:

INFRARED LED; PLCC-2 PKG, CLEAR, SILICONE, POINT SOURCE, 875NM LED

Description:

Phototransistor, Silicon, TO-18 Metal Can

Description:

EMITTER IR 890NM 50MA RADIAL

Description:

Si PIN photodiode, DIP, 120deg, filt, BPW34F

Description:

TC SLOT PMS PNP D-ON L SHAPE

Description:

PHOTODIODE FIBER OPTIC PIN TO-46

Description:

Photodiode, Solderable Planar; 0.3 mA (Min.); 0.40 V (Typ.); 1.7 uA (Max.)

Description:

Sensor, Slot-Type, NPN, 5MM Distance, .3M Robot Cable

Description:

PHOTOCELL, CDS, .2X.169IN.

Description:

Sensor, Phototransistor Detector, 28 Angular Response, Surface Mount Package

Description:

PHOTOTRNS SILICN NPN HERMET PILL

Description:

880 nm IRED lateral; 4.57x1.65 mm.; 5 mW output power; emission profile of ±25°

Description:

Phototransistor, 5mm, SFH 314

Description:

Photocell, Hermetically Packaged

Description:

PLASTIC ENCAPSULATED CERAMIC PKG, TO-5

Description:

Sensor; ZTP-115S Infrared Sensor; Thermopile; IR Sensor

Description:

SLOTTED OPTICAL SWITCH PHOTOLOGIC

Description:

Photoconductive Cell, Hermetically Sealed, TO-18

Description:

Planar silicon photodiode; two lead ceramic; coated with thick layer clear epoxy

Description:

Phototransistor; Compact Metal Can Coaxial Package; NPN; 0.4 V (Sat.); 100 nA

Description:

Photodiode; 30 Series; 0.69 mA (Typ.); 0.45 V (Typ.); 0.05 muA (Typ.); -40 deg

Description:

PHOTODARL SILICON NPN SIDE LOOK

Description:

PHOTOTRANS. W/BASE-EMITTER RES. PLAS TO-46

Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

Infrared Emitter, GaAs Diode, 890 nm, 2.0 mW/cm2, TO-46

Description:

EMITTER IR 935NM 50MA T-1

Description:

EMITTER IR 890NM 50MA RADIAL

Description:

PHOTOTRANS SILICON NPN HERM TO18

Description:

Detector; TO-46; NPN; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.

Description:

PHOTO TRANSISTOR FLAT LENS

Description:

PIN DIODE TO-18,

Description:

SLOTTED OPTICAL SWITCHPHOTOLOGIC

Description:

To-5 Photocells Plastic Encapsulated

Description:

EMITTER IR 890NM 50MA RADIAL

Description:

PHOTOTRANS SILICON PIN SIDE LOOK

Description:

Photoconductive Cell; 16 Kilohms (Typ.); 500 Kilohms (Min.); 0.75 (Typ.)