Description:

OPTOCOUPLER DC-IN 4-CH TRANS DC-OUT 16-PIN MINI-FLAT

Description:

OP803SL Phototransistor, Through Hole 3-Pin TO-18 package

Description:

Silicon photodiode; hermetic TO-46; flat window; IR blocking; blue; intermed. FOV

Description:

Silicon photodiode; hermetic TO-46; fast response; dark current; wide field of view

Description:

HERMETIC PHOTOCELL

Description:

NPN Silicon phototransistor; T1; fast response; narrow field of view

Description:

Sensor; ZTP-115 Standard Infrared Sensor; Thermopile; IR Sensor

Description:

Silicon photodiode; ceramic; blue enhanced; very low dark current; wide FOV

Description:

PHOTOCELL

Description:

Silicon photodiode; hermetic TO-8; flat window; blue; wide field of view

Description:

Sensor, Photomicro, Thin Compact Slot, Cable Termination, NPN, 5mm

Description:

H11A1 DC Input Phototransistor Output Optocoupler, Through Hole, 6-Pin DIP

Description:

DIODE, IR EMITTING, 38 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C

Description:

Diffuse PE Sensor Maximum of 150 mm Detection Range, NPN Output, Block Style, IP69K

Description:

Photodiode; Case 22 Mini DIP; 70 muA (Typ.); 365 mV (Typ.); 30 nA (Max.); -20 d

Description:

PLASTIC ENCAPSULATED CERAMIC PKG, TO-18

Description:

Photo Diode, Planar; Clear Epoxy Dome Package; 55 muA (Typ.); 0.40 V (Typ.)

Description:

Photoconductive Cell, Hermetically Sealed, TO-18

Description:

Photocell; 6.7 Megohms (Min.); 615 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-5

Description:

Photocell; 0.80 Megohms (Min.); 515 nm; 80 Vpeak (Max.); 50 mW @ 25 degC; TO-18

Description:

BPV11F 30 deg IR Phototransistor, Through Hole 2-Pin 5mm (T-1 3/4) package

Description:

Planar silicon photodiode; two lead ceramic; high shunt resistance; blue response

Description:

Quad element, ceiling mount pyroelectric detector

Description:

panel mount hermetic, 5 meg ohms, max 100v

Description:

Photoconductive Cell; 150 Ohms (Typ.) @100 ftc; 560 Kilohms (Min.); 515 nm

Description:

Sensor, Thin Compact, Slot, PMS, NPN

Description:

Optocoupler, High Speed; DIP-8; -55 degC; 100 degC; -1.7 mV/ degC (Typ.); 5.0

Description:

Detector; TO-46; NPN; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.

Description:

Sensor, Transmissive, Chassis Mount, Plastic Package, Through Beam Module

Description:

OP505A IR Receiver, Through Hole, 3.18 (Dia.) x 5.84mm

Description:

OPB991L51Z Panel Mount Slotted Optical Switch, Transistor Output

Description:

Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC

Description:

Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC

Description:

Silicon photodiode; three lead TO-5 hermetic; flat window; UV enhanced; Wide FOV

Description:

Photoconductive Cell; 1 Megohms (Min.); 0.85 (Typ.); 200 Vpeak (Max.); TO-8

Description:

Description:

880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°

Description:

Photoconductive Cell, Hermetically Sealed, TO-18

Description:

Photoconductive Cell, Hermetically Sealed, TO-5

Description:

Photocell; 0.22 Megohms (Min.); 550 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-

Description:

Infrared Emitter, GaAs Diode, 935 nm, 5.0 mW/cm2, TO-46

Description:

HERMETIC PHOTOCELL

Description:

Photocell, Pinned

Description:

PINNED PHOTO CELL

Description:

SILICON PHOTO TRANSISTOR SENSOR

Description:

Blue silicon photodiode; 8mm substrate; IR blocking; 5.2mm; 330nm-720nm

Description:

Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC

Description:

NPN Silicon phototransistor; TO-106; ceramic; fast response; Wide field of view

Description:

TO-46, Flat Window GaAlAs IRED, 880nm

Description:

TLMG1100-GS08 Green LED, 570 nm 1608 (0603), Rectangle Lens SMD package