Description:

Opto SFH 206 K IR + Visible Light Si Photodiode, 60 deg, Thru Hole 5mm package

Description:

3 CHANNEL OPTICAL COMPARATOR,

Description:

EMITTER IR 890NM 50MA RADIAL

Description:

PHOTOCELL, CDS, .2X.169IN.

Description:

Phototransistor, 2 Elements, 18deg, BPX82

Description:

TEKT5400S +/-37deg Day Light Phototransistor, Thru Hole 2-Pin Side Looker package

Description:

Detector; T-1; NPN; 20 deg; 15 V; 1.1 V; 0.5 mA (Min.); 250 nA; 70 mW; -40 deg

Description:

Pyroelectric Infrared Detectors - Single and Dual Channel Detectors

Description:

Detector, PhotoDarlington; Side-LookingPlastic; 50 deg; 15 V; 1.1 V; 1 mA (Min

Description:

Description:

Photoconductive Cell; 1 Megohms (Min.); 0.90 (Typ.); 100 Vpeak (Max.); -40 degC

Description:

Detector, PhotoDarlington; Compact Metal Can Coaxial; NPN; 24 deg; 15 V; 1.1 V

Description:

Photoconductive Cell; 1 Megohms (Min.); 0.90 (Typ.); 100 Vpeak (Max.); 40 V

Description:

Detector, Phototransistor; Side-LookingPlastic; NPN; 50 deg; 30 V; 0.4 V; 100

Description:

TSFF5210 IR LED, 870nm, T-1 3/4 (5mm) Through Hole package

Description:

Optoelectronics, Detector; Pyroelectric Dual Element for Intrusion Alarm; TO-5

Description:

Thermopile Detector; 75 Kilohms (Typ.); TPS 333 Series

Description:

HI POWER OUTMED SPEEDTO-46 FLAT LENS

Description:

Photoconductive Cell; 34 Kilohms (Typ.); 500 Kilohms (Min.); 0.80 (Typ.)

Description:

Photocell, Hermetically Packaged

Description:

Photodiode, Planar; Clear Epoxy Dome Package; 180 muA (Typ.); 0.40 V (Typ.); 2.0

Description:

Photoconductive Cell, Hermetically Sealed, TO-18

Description:

Photocell; 100 Kilohms (Min.); 550 nm; 170 Vpeak (Max.); 500 mW @ 25 degC; TO-

Description:

CDS/CDSE PHOTOCONDUCTIVE CELLS, HERMETICALLY SEALED PKG, TO-5

Description:

Photoconductive Cell, Plastic Encapsulated Ceramic Pkg, TO-5

Description:

Photoconductive Cell, Hermetically Sealed, TO-18

Description:

NTE Electronics, Inc.

Description:

Opto SFH 229 Full Spectrum Si Photodiode, 17 deg, Through Hole 3mm package

Description:

Opto SFH 203 P IR + Visible Light Si Photodiode, 75 deg, Thru Hole 5mm package

Description:

Silicon photodiode; long T1 package; fastresponse; dark current; intermediate FOV

Description:

Silicon photodiode; three lead TO-8 hermetic; flat window; UV enhanced; wide FOV

Description:

Silicon photodiode; ceramic; plastic molded lens; fast response; low dark current

Description:

880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°

Description:

Silicon photodiode; 6mm ceramic; IR blocking; blue enhanced; wide field of view

Description:

Photodiode; 0.16 mA (Typ.); 0.45 V (Typ.); 0.02 uA (Typ.); 0.5 nF (Typ.); 0.2

Description:

PHOTOCELL

Description:

Photoconductive Cell, CDS

Description:

Photo Diode; Peak Reflow Compatible (260 C)

Description:

Detector, Thermopile TO-5 0.7 mm x 0.7 mm 35 V/W 2.5 mm

Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

SENS OPTO SLOT 3.18MM TRANS C-MT

Description:

Photocell; 600 Kilohms (Min.); 550 nm; 250 Vpeak (Max.); 500 mW @ 25 degC; TO-

Description:

PHOTO TRANSISTOR PLASTIC T-1

Description:

TC SLOT PMS PNP D-ON L SHAPE

Description:

Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC

Description:

Sensor, Slot Dark-On, T-Shape, Through Beam, NPN, 5 to 24VDC, 5mm, 35 mA

Description:

Diode, Infrared Emitter; TO-46 Metal Can; 880 nm; 1.9 V; 100 mA; -55 degC; 125

Description:

Phototransistor; TO-46; NPN; 30 V; 0.4 V; 16 mA (Min.); 100 nA; 150 mW; -55 deg

Description:

Detector, Phototransistor; TO-46; NPN; 90/18 deg; 30 V (Min.); 0.4 V (Max.)

Description:

PhotoDiode; Pill Style Metal Can; PN; 48 deg; 7 uA (Min.); 20 nA; 125 mW; -55